Mapping boron in silicon solar cells using electron energy-loss spectroscopy

Journal of Physics: Conference Series

Volumn 326, Issue 1, 2011, Pages

  Duchamp, M ^a   Boothroyd, C B ^a   Kovacs A ^a   Kadkhodazadeh, S ^a   Kasama, T ^a   Moreno, M S ^b   Van Aken, B B ^c   Barnes, J P ^d   Veillerot, M ^d   Newcomb, S B ^e   Dunin Borkowski, R E ^a,b,c,d,e,f  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b CENTRO ATÓMICO BARILOCHE   (Argentina)

^c TNO   (Netherlands)

^d CEA LETI   (France)

^e NEWPORT CORPORATION   (United States)

^f FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; MASS SPECTROMETRY; SECONDARY ION MASS SPECTROMETRY; SILICON SOLAR CELLS; SOLAR CELLS;

AB INITIO; BORON CONCENTRATIONS; INTRINSIC LAYER; MULTIPLE SCATTERING CALCULATIONS; REAL-SPACE; SI LAYER; SOLAR CELL STRUCTURES;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 82955251080     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/326/1/012052     Document Type: Conference Paper

References (6)

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