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Journal of Physics D: Applied Physics

Volumn 46, Issue 12, 2013, Pages

Influence of phosphorous doping on silicon nanocrystal formation in silicon-rich silicon nitride films

(3) Wu, P J a Wang, Y C a Chen, I C a

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; CHEMICAL VAPOUR DEPOSITION; CRYSTALLIZATION BEHAVIOURS; CRYSTALLIZATION RATES; CRYSTALLIZATION TEMPERATURE; PHOSPHOROUS DOPING; PHOSPHORUS ADDITION; PHOSPHORUS CONCENTRATION; PHOSPHORUS CONTENTS; PHOSPHORUS-DOPED; POST ANNEALING; SILICON NANOCRYSTALS; SILICON NITRIDE MATRIX; SILICON-RICH SILICON NITRIDES;

CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; PHOSPHORUS; PHOTOELECTRONS; SEMICONDUCTOR DOPING; SILICON NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 84874508347 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/46/12/125104 Document Type: Article

Times cited : (13)

References (38)

1
- 0029405953
- 10.1038/378258a0 0028-0836
- Lu Z H, Lockwood D J and Baribeau J M 1995 Nature 378 258
- (1995) Nature , vol.378 , Issue.6554 , pp. 258
- Lu, Z.H.¹ Lockwood, D.J.² Baribeau, J.M.³

2
- 0029775699
- 10.1103/PhysRevLett.76.539 0031-9007
- Lockwood D J, Lu Z H and Baribeau J M 1996 Phys. Rev. Lett. 76 539
- (1996) Phys. Rev. Lett. , vol.76 , Issue.3 , pp. 539
- Lockwood, D.J.¹ Lu, Z.H.² Baribeau, J.M.³

3
- 14344278734
- Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride
- DOI 10.1103/PhysRevLett.86.1355
- Park N M, Choi C J, Seong T Y and Park S J 2001 Phys. Rev. Lett. 86 1355 (Pubitemid 32188312)
- (2001) Physical Review Letters , vol.86 , Issue.7 , pp. 1355-1357
- Park, N.-M.¹ Choi, C.-J.² Seong, T.-Y.³ Park, S.-J.⁴

4
- 44949151571
- Silicon quantum dot/crystalline silicon solar cells
- DOI 10.1088/0957-4484/19/24/245201, PII S095744840872289X
- Cho E C, Park S, Hao X, Song D, Conibeer G, Park S C and Green M A 2008 Nanotechnology 19 245201 (Pubitemid 351813664)
- (2008) Nanotechnology , vol.19 , Issue.24 , pp. 245201
- Cho, E.-C.¹ Park, S.² Hao, X.³ Song, D.⁴ Conibeer, G.⁵ Park, S.-C.⁶ Green, M.A.⁷

5
- 67349261438
- 10.1016/j.solmat.2008.09.032 0927-0248
- Park S, Cho E, Song D, Conibeer G and Green M A 2009 Sol. Energy Mater. Sol. Cells 93 684
- (2009) Sol. Energy Mater. Sol. Cells , vol.93 , Issue.6-7 , pp. 684
- Park, S.¹ Cho, E.² Song, D.³ Conibeer, G.⁴ Green, M.A.⁵

6
- 84857791791
- 10.1016/j.solmat.2011.02.029 0927-0248
- Perez-Wurfl I, Ma L, Lin D, Hao X, Green M A and Conibeer G 2012 Sol. Energy Mater. Sol. Cells 100 65
- (2012) Sol. Energy Mater. Sol. Cells , vol.100 , pp. 65
- Perez-Wurfl, I.¹ Ma, L.² Lin, D.³ Hao, X.⁴ Green, M.A.⁵ Conibeer, G.⁶

7
- 0035938373
- 10.1063/1.1367277 0003-6951
- Park N M, Kim T S and Park S J 2001 Appl. Phys. Lett. 78 2575
- (2001) Appl. Phys. Lett. , vol.78 , Issue.17 , pp. 2575
- Park, N.M.¹ Kim, T.S.² Park, S.J.³

8
- 31544438879
- Influence of the surrounding host in obtaining tunable and strong visible photoluminescence from silicon nanoparticles
- DOI 10.1063/1.2164919, 041916
- Santana G, Monroy B M, Ortiz A, Huerta L, Alonso J C, Fandiño J, Aguilar-Hernández J, Hoyos E, Cruz-Gandarilla F and Contreras-Puentes G 2006 Appl. Phys. Lett. 88 041916 (Pubitemid 43164046)
- (2006) Applied Physics Letters , vol.88 , Issue.4 , pp. 1-3
- Santana, G.¹ Monroy, B.M.² Ortiz, A.³ Huerta, L.⁴ Alonso, J.C.⁵ Fandino, J.⁶ Aguilar-Hernandez, J.⁷ Hoyos, E.⁸ Cruz-Gandarilla, F.⁹ Contreras-Puentes, G.¹⁰

9
- 43349106409
- Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices
- DOI 10.1063/1.2920819
- Huang R, Dong H, Wang D, Chen K, Ding H, Wang X, Li W, Xu J and Ma Z 2008 Appl. Phys. Lett. 92 181106 (Pubitemid 351661975)
- (2008) Applied Physics Letters , vol.92 , Issue.18 , pp. 181106
- Huang, R.¹ Dong, H.² Wang, D.³ Chen, K.⁴ Ding, H.⁵ Wang, X.⁶ Li, W.⁷ Xu, J.⁸ Ma, Z.⁹

10
- 0000375694
- 10.1103/PhysRevB.44.1806 0163-1829 B
- Ye Q, Tsu R and Nicollian E H 1991 Phys. Rev. B 44 1806
- (1991) Phys. Rev. , vol.44 , Issue.4 , pp. 1806
- Ye, Q.¹ Tsu, R.² Nicollian, E.H.³

11
- 0034664594
- Crystallization of amorphous superlattices in the limit of ultrathin films with oxide interfaces
- DOI 10.1103/PhysRevB.62.8391
- Zacharias M and Streitenberger P 2000 Phys. Rev. B 62 8391 (Pubitemid 32366554)
- (2000) Physical Review B - Condensed Matter and Materials Physics , vol.62 , Issue.12 , pp. 8391-8396
- Zacharias, M.¹ Streitenberger, P.²

12
- 77749239717
- 10.1063/1.3323106 0003-6951 081912
- Feroughi O M et al 2010 Appl. Phys. Lett. 96 081912
- (2010) Appl. Phys. Lett. , vol.96 , Issue.8
- Feroughi, O.M.¹

13
- 41349097934
- Doped nanocrystals
- DOI 10.1126/science.1143802
- Norris D J, Efros A L and Erwin S C 2008 Science 319 1776 (Pubitemid 351451581)
- (2008) Science , vol.319 , Issue.5871 , pp. 1776-1779
- Norris, D.J.¹ Efros, A.L.² Erwin, S.C.³

14
- 57649232797
- 10.1016/j.solmat.2008.10.017 0927-0248
- Hao X J, Cho E C, Flynn C, Shen Y S, Park S C, Conibeer G and Green M A 2009 Sol. Energy Mater. Sol. Cells 93 273
- (2009) Sol. Energy Mater. Sol. Cells , vol.93 , Issue.2 , pp. 273
- Hao, X.J.¹ Cho, E.C.² Flynn, C.³ Shen, Y.S.⁴ Park, S.C.⁵ Conibeer, G.⁶ Green, M.A.⁷

15
- 78751481997
- 10.1002/pssc.201000677 1862-6351 c
- Ma L, Lin D, Conibeer G and Perez-Wurfl I 2011 Phys. Status Solidi c 8 205
- (2011) Phys. Status Solidi , vol.8 , Issue.1 , pp. 205
- Ma, L.¹ Lin, D.² Conibeer, G.³ Perez-Wurfl, I.⁴

16
- 66049125906
- 10.1016/j.tsf.2009.02.076 0040-6090
- Hao X J, Cho E C, Scardera G, Bellet-Amalric E, Bellet D, Shen Y S, Huang S, Huang Y D, Conibeer G and Green M A 2009 Thin Solid Films 517 5646
- (2009) Thin Solid Films , vol.517 , Issue.19 , pp. 5646
- Hao, X.J.¹ Cho, E.C.² Scardera, G.³ Bellet-Amalric, E.⁴ Bellet, D.⁵ Shen, Y.S.⁶ Huang, S.⁷ Huang, Y.D.⁸ Conibeer, G.⁹ Green, M.A.¹⁰

17
- 31744436718
- 10.1103/PhysRevB.33.7069 0163-1829 B
- Tsu D V, Lucovsky G and Mantini M J 1986 Phys. Rev. B 33 7069
- (1986) Phys. Rev. , vol.33 , Issue.10 , pp. 7069
- Tsu, D.V.¹ Lucovsky, G.² Mantini, M.J.³

18
- 0000492037
- 10.1103/PhysRevB.48.5315 0163-1829 B
- Hasegawa S, He L, Amano Y and Inokuma T 1993 Phys. Rev. B 48 5315
- (1993) Phys. Rev. , vol.48 , Issue.8 , pp. 5315
- Hasegawa, S.¹ He, L.² Amano, Y.³ Inokuma, T.⁴

19
- 0000228280
- 10.1103/PhysRevB.38.8171 0163-1829 B
- Bustarret E, Bensouda M, Habrard M C, Bruyère J C, Poulin S and Gujrathi S C 1988 Phys. Rev. B 38 8171
- (1988) Phys. Rev. , vol.38 , Issue.12 , pp. 8171
- Bustarret, E.¹ Bensouda, M.² Habrard, M.C.³ Bruyère, J.C.⁴ Poulin, S.⁵ Gujrathi, S.C.⁶

20
- 0001281628
- 10.1016/0169-4332(95)00027-5 0169-4332
- Powell C J 1995 Appl. Surf. Sci. 89 141
- (1995) Appl. Surf. Sci. , vol.89 , Issue.2 , pp. 141
- Powell, C.J.¹

21
- 0032483883
- 10.1016/S0040-6090(98)01132-8 0040-6090
- Li B, Fujimoto T, Fukumoto N, Honda K and Kojima I 1998 Thin Solid Films 334 140
- (1998) Thin Solid Films , vol.334 , Issue.1-2 , pp. 140
- Li, B.¹ Fujimoto, T.² Fukumoto, N.³ Honda, K.⁴ Kojima, I.⁵

22
- 71549114580
- 0957-4484 025602
- Perego M, Bonafos C and Fanciulli M 2010 Nanotechnology 21 025602
- (2010) Nanotechnology , vol.21 , Issue.2
- Perego, M.¹ Bonafos, C.² Fanciulli, M.³

23
- 0034344657
- 10.1246/cl.2000.1252 0366-7022
- Meng Z, Peng Y, Yang Z and Qian Y 2000 Chem. Lett. 29 1252
- (2000) Chem. Lett. , vol.29 , Issue.11 , pp. 1252
- Meng, Z.¹ Peng, Y.² Yang, Z.³ Qian, Y.⁴

24
- 0019539138
- 10.1080/01418638108222114 1364-2812 B
- Vepřek S, Iqbal Z, Brunner J and Schärli M 1981 Phil. Mag. B 43 527
- (1981) Phil. Mag. , vol.43 , Issue.3 , pp. 527
- Vepřek, S.¹ Iqbal, Z.² Brunner, J.³ Schärli, M.⁴

25
- 77958091256
- 10.1063/1.3501133 0003-6951 153112
- Mercaldo L V, Esposito E M, Veneri P D, Fameli G, Mirabella S and Nicotra G 2010 Appl. Phys. Lett. 97 153112
- (2010) Appl. Phys. Lett. , vol.97 , Issue.15
- Mercaldo, L.V.¹ Esposito, E.M.² Veneri, P.D.³ Fameli, G.⁴ Mirabella, S.⁵ Nicotra, G.⁶

26
- 0001760927
- 10.1063/1.117371 0003-6951
- Zi J, Buscher H, Falter C, Ludwig W, Zhang K and Xie X 1996 Appl. Phys. Lett. 69 200
- (1996) Appl. Phys. Lett. , vol.69 , Issue.2 , pp. 200
- Zi, J.¹ Buscher, H.² Falter, C.³ Ludwig, W.⁴ Zhang, K.⁵ Xie, X.⁶

27
- 0017545298
- 11b Ions
- DOI 10.1063/1.323408
- Csepregi L, Kennedy E F, Gallagher T J, Mayer J W and Sigmon T W 1977 J. Appl. Phys. 48 4234 (Pubitemid 8557452)
- (1977) Journal of Applied Physics , vol.48 , Issue.10 , pp. 4234-4240
- Csepregi, L.¹ Kennedy, E.F.² Gallagher, T.J.³ Mayer, J.W.⁴ Sigmon, T.W.⁵

28
- 0030214356
- Optical in situ monitoring of solid phase crystallization of amorphous silicon
- DOI 10.1016/0022-0248(96)00254-0, PII S0022024896002540
- Bergmann R B and Krinke J 1996 J. Cryst. Growth 165 341 (Pubitemid 126360863)
- (1996) Journal of Crystal Growth , vol.165 , Issue.3 , pp. 341-344
- Bergmann, R.B.¹

29
- 0017547856
- 14N, AND NOBLE GASES ON THE CRYSTALLIZATION OF AMORPHOUS Si LAYERS.
- DOI 10.1063/1.323409
- Kennedy E F, Csepregi L, Mayer J W and Sigmon T W 1977 J. Appl. Phys. 48 4241 (Pubitemid 8557453)
- (1977) Journal of Applied Physics , vol.48 , Issue.10 , pp. 4241-4246
- Kennedy, E.F.¹ Csepregi, L.² Mayer, J.W.³ Sigmon, T.W.⁴

30
- 0037482973
- 2 layers
- DOI 10.1134/1.1582541
- Kachurin G A, Yanovskaya S G, Tetelbaum D I and Mikhailov 2003 Semiconductors 37 738 (Pubitemid 36795250)
- (2003) Semiconductors , vol.37 , Issue.6 , pp. 713-717
- Kachurin, G.A.¹ Yanovskaya, S.G.² Tetelbaum, D.I.³ Mikhailov, A.N.⁴

31
- 4444311564
- 10.1063/1.1779955 0003-6951
- Fujii M, Yamaguchi Y, Takase Y, Ninomiya K and Hayashi S 2004 Appl. Phys. Lett. 85 1158
- (2004) Appl. Phys. Lett. , vol.85 , Issue.7 , pp. 1158
- Fujii, M.¹ Yamaguchi, Y.² Takase, Y.³ Ninomiya, K.⁴ Hayashi, S.⁵

32
- 3142663202
- 10.1016/j.nimb.2004.03.076 0168-583X B
- Kachurin G A, Cherkova S G, Volodin V A, Kesler V G, Gutakovsky A K, Cherkov A G, Bublikov A V and Tetelbaum D I 2004 Nucl. Instrum. Methods Phys. Res. B 222 497
- (2004) Nucl. Instrum. Methods Phys. Res. , vol.222 , Issue.3-4 , pp. 497
- Kachurin, G.A.¹ Cherkova, S.G.² Volodin, V.A.³ Kesler, V.G.⁴ Gutakovsky, A.K.⁵ Cherkov, A.G.⁶ Bublikov, A.V.⁷ Tetelbaum, D.I.⁸

33
- 84975428852
- 10.1149/1.2401803 0013-4651
- Armstrong W E and Tolliver D L 1974 J. Electrochem. Soc. 121 307
- (1974) J. Electrochem. Soc. , vol.121 , Issue.2 , pp. 307
- Armstrong, W.E.¹ Tolliver, D.L.²

34
- 0019533534
- 10.1149/1.2127434 0013-4651
- Adams A C and Capio C D 1981 J. Electrochem. Soc. 128 423
- (1981) J. Electrochem. Soc. , vol.128 , Issue.2 , pp. 423
- Adams, A.C.¹ Capio, C.D.²

35
- 0021784551
- 10.1149/1.2113749 0013-4651
- Bowling R A and Larrabee G B 1985 J. Electrochem. Soc. 132 141
- (1985) J. Electrochem. Soc. , vol.132 , Issue.1 , pp. 141
- Bowling, R.A.¹ Larrabee, G.B.²

36
- 48049103009
- 10.1016/j.electacta.2008.03.081 0013-4686
- Zeng Z, Liang A and Zhang J 2008 Electrochim. Acta 53 7344
- (2008) Electrochim. Acta , vol.53 , Issue.24 , pp. 7344
- Zeng, Z.¹ Liang, A.² Zhang, J.³

37
- 84859344043
- 10.1021/ja212206m 0002-7863
- Ding L X, Wang A L, Li G R, Liu Z Q, Zhao W X, Su C Y and Tong Y X 2012 J. Am. Chem. Soc. 134 5730
- (2012) J. Am. Chem. Soc. , vol.134 , Issue.13 , pp. 5730
- Ding, L.X.¹ Wang, A.L.² Li, G.R.³ Liu, Z.Q.⁴ Zhao, W.X.⁵ Su, C.Y.⁶ Tong, Y.X.⁷

38
- 10044248565
- On the high-dose effect in the case of ion implantation of silicon
- DOI 10.1134/1.1823055
- Tetelbaum D I and Gerasimov A I 2004 Semiconductors 38 1260 (Pubitemid 39604700)
- (2004) Semiconductors , vol.38 , Issue.11 , pp. 1260-1262
- Tetelbaum, D.I.¹ Gerasimov, A.I.²

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