Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

Thin Solid Films

Volumn 517, Issue 19, 2009, Pages 5646-5652

  Hao, X J ^a   Cho, E C ^a   Scardera, G ^a   Bellet Amalric, E ^b   Bellet, D ^c   Shen, Y S ^a   Huang, S ^a   Huang, Y D ^a   Conibeer, G ^a   Green, M A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b CEA GRENOBLE   (France)

^c LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

Author keywords

Doping; Phosphorus; Si nanocrystal; Solar cell

Indexed keywords

ANNEALING TEMPERATURES; COSPUTTERING; DOPING; HIGH-TEMPERATURE ANNEALING; MATRIX; OPTICAL ABSORPTION; PHOSPHORUS DOPING; PHOSPHORUS-DOPED; SI NANOCRYSTAL; SILICON DIOXIDE; SILICON NANOCRYSTALS; SILICON RICH OXIDES; STRUCTURAL AND OPTICAL PROPERTIES;

DOPING (ADDITIVES); OPTICAL PROPERTIES; PHASE SEPARATION; PHOSPHORUS; PHOTOVOLTAIC CELLS; SILICA; SILICON; SILICON OXIDES; SOLAR CELLS; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOCRYSTALS;

EID: 66049125906     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.076     Document Type: Article

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