The effect of implantation of P ions on the photoluminescence of Si nanocrystals in SiO2 layers

Semiconductors

Volumn 37, Issue 6, 2003, Pages 713-717

  Kachurin, G A ^a   Yanovskaya, S G ^a   Tetelbaum, D I ^b   Mikhailov A N ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037482973     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1582541     Document Type: Article

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