On the high-dose effect in the case of ion implantation of silicon

Semiconductors

Volumn 38, Issue 11, 2004, Pages 1260-1262

  Tetelbaum, D I ^a   Gerasimov, A I ^a  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 10044248565     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1823055     Document Type: Article

References (12)

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