Extreme monolayer-selectivity of hydrogen-plasma reactions with graphene

ACS Nano

Volumn 7, Issue 2, 2013, Pages 1324-1332

  Diankov, Georgi ^a   Neumann, Michael ^a   Goldhaber Gordon, David ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

chemical reactivity; graphene; hydrogen plasma; preferential etching

Indexed keywords

AREAL DENSITIES; BASAL PLANES; BI-LAYER; ETCH PITS; ETCH RATES; HOLE FORMATION; HYDROGEN PLASMA TREATMENTS; HYDROGEN PLASMAS; MULTILAYER GRAPHENE; ORDERS OF MAGNITUDE; PLASMA SPECIES; PREFERENTIAL ETCHING; ROOM TEMPERATURE; SAMPLE TEMPERATURE; SUBSTRATE ROUGHNESS; UNIFORM SIZE;

ANISOTROPIC ETCHING; CHEMICAL REACTIVITY; DEPOSITS; GRAPHENE; MICA; PLASMA APPLICATIONS;

MONOLAYERS;

EID: 84874422508     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn304903m     Document Type: Article

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