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Volumn 9, Issue 1, 2009, Pages 416-421

Quantum dot behavior in graphene nanoconstrictions

Author keywords

[No Author keywords available]

Indexed keywords

BEHAVIOR CHARACTERISTICS; DOT SIZES; DOUBLE QUANTUM DOTS; GRAPHENE; GRAPHENE NANORIBBONS; MULTIPLE QUANTUM DOTS; NANOCONSTRICTIONS; NANORIBBON; NANORIBBONS; QUANTUM DOTS;

EID: 60749124436     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803291b     Document Type: Article
Times cited : (200)

References (32)
  • 15
    • 61649097469 scopus 로고    scopus 로고
    • Because two-wire measurements do not allow us to eliminate the effects of contact resistance, we base our mobility estimates on the slope of conductance traces at relatively low densities 10 V from the Dirac point where the graphene sheet resistance is still dominant over the contact resistances.
    • Because two-wire measurements do not allow us to eliminate the effects of contact resistance, we base our mobility estimates on the slope of conductance traces at relatively low densities 10 V from the Dirac point where the graphene sheet resistance is still dominant over the contact resistances.
  • 16
    • 84868904102 scopus 로고    scopus 로고
    • We calculate dot size based on a parallel plate caρacitor model where the back gate defines one plate of the capacitor and the graphene sheet and nearby metal gates define the other ρlate, justified by the presence of conducting graphene sheet everywhere except for the two narrow strips defining the constriction. The ρresence in each of the samples discussed here of graphene or metal gates near the constriction may result in some screening of the back gate voltage, resulting in an underestimation of dot areas in each case. In data sets where d//d V is measured with respect to side gate voltage, we calculate an equivalent back gate voltage using a separately measured multiplier
    • We calculate dot size based on a parallel plate caρacitor model where the back gate defines one plate of the capacitor and the graphene sheet and nearby metal gates define the other ρlate, justified by the presence of conducting graphene sheet everywhere except for the two narrow strips defining the constriction. The ρresence in each of the samples discussed here of graphene or metal gates near the constriction may result in some screening of the back gate voltage, resulting in an underestimation of dot areas in each case. In data sets where d//d V is measured with respect to side gate voltage, we calculate an equivalent back gate voltage using a separately measured multiplier.
  • 17
    • 61649120338 scopus 로고    scopus 로고
    • The model we use to generate the expected double-dot behavior does not take into account the change in Fermi level with gate voltage that takes place in our system
    • The model we use to generate the expected double-dot behavior does not take into account the change in Fermi level with gate voltage that takes place in our system.
  • 18
    • 61649088381 scopus 로고    scopus 로고
    • The uncertainties come largely from the conversion from side gate to equivalent back gate voltage
    • The uncertainties come largely from the conversion from side gate to equivalent back gate voltage.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.