Charge inhomogeneity determines oxidative reactivity of graphene on substrates

ACS Nano

Volumn 6, Issue 9, 2012, Pages 8335-8341

  Yamamoto, Mahito ^a   Einstein, Theodore L ^a   Fuhrer, Michael S ^a   Cullen, William G ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

graphene; hexagonal boron nitride; mica; oxidation; Raman spectroscopy; reactivity

Indexed keywords

BI-LAYER; CHARGE TRAP; CHARGED IMPURITY; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); INHOMOGENEITIES; OXIDATIVE ETCHING; OXIDATIVE REACTIVITY; OXYGEN TREATMENT; POTENTIAL FLUCTUATIONS; SHARP CONTRAST; SINGLE LAYER; TOPOGRAPHIC CORRUGATION;

CHARGE TRAPPING; MICA; OXIDATION; RAMAN SPECTROSCOPY; REACTIVITY (NUCLEAR); SUBSTRATES; SURFACE ROUGHNESS;

GRAPHENE;

GRAPHITE; NANOMATERIAL; OXYGEN; SILICON DIOXIDE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CRYSTALLIZATION; MATERIALS TESTING; METHODOLOGY; OXIDATION REDUCTION REACTION; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; GRAPHITE; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; NANOSTRUCTURES; OXIDATION-REDUCTION; OXYGEN; PARTICLE SIZE; SILICON DIOXIDE; SURFACE PROPERTIES;

EID: 84866677859     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn303082a     Document Type: Article

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