Physical properties of RF sputtered ITO thin films and annealing effect

Journal of Physics D: Applied Physics

Volumn 39, Issue 1, 2006, Pages 184-189

  Kerkache, L ^a   Layadi, A ^a   Dogheche, E ^b   Remiens D ^b  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; ENERGY GAP; INDIUM COMPOUNDS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BULK VALUE; LATTICE CONSTANT; POST-DEOPOSITION ANNEALING;

THIN FILMS;

EID: 29144536259     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/1/027     Document Type: Article

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