Epitaxial growth of orthorhombic SnO 2 films on various YSZ substrates by plasma enhanced atomic layer deposition

Journal of Crystal Growth

Volumn 348, Issue 1, 2012, Pages 15-19

  Kim, Sungtae ^a   Kim, Dai Hong ^a   Hong, Seong Hyeon ^a  

^a Seoul National University   (South Korea)

Author keywords

A1. Crystal structure; A3. Atomic layer deposition; B1. Tin oxide; B1. Yttria stabilized zirconia

Indexed keywords

ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL RESISTIVITY; FILM ORIENTATIONS; HIGH-RESOLUTION TEM ANALYSIS; IN-PLANE ORIENTATION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POLYCRYSTALLINE; VISIBLE RANGE; X RAY POLE FIGURES;

ATOMIC LAYER DEPOSITION; ELECTRIC CONDUCTIVITY; OPTICAL PROPERTIES; OXIDE MINERALS; SUBSTRATES; TIN; TIN OXIDES; X RAY DIFFRACTION; YTTRIUM ALLOYS; ZIRCONIA;

YTTRIA STABILIZED ZIRCONIA;

EID: 84859627445     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.03.047     Document Type: Article

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