Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation

Applied Physics Letters

Volumn 102, Issue 5, 2013, Pages

  Lee, Sunghwan ^a   Paine, David C ^a  

^a Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CARRIER DENSITY; DOPING MECHANISM; EQUILIBRIUM ANALYSIS; HIGH PRESSURE; IN-CHANNELS; INDIUM ZINC OXIDES; NATIVE DEFECT; OXYGEN DEFECT; OXYGEN FUGACITY; POWER DEPENDENCE; THRESHOLD VOLTAGE SHIFTS; ULTRAHIGH PRESSURE;

ATMOSPHERIC PRESSURE; CARRIER CONCENTRATION; EQUILIBRIUM CONSTANTS; THIN FILM TRANSISTORS;

DEFECTS;

EID: 84874030487     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4790187     Document Type: Article

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