Vacancy defects in indium oxide: An ab-initio study

Current Applied Physics

Volumn 11, Issue 3 SUPPL., 2011, Pages

  Reunchan, Pakpoom ^a,b   Zhou, Xin ^a,c   Limpijumnong, Sukit ^b,d   Janotti, Anderson ^e   Van De Walle, Chris G ^e  

^a Asia Pacific Center for Theoretical Physics (APCTP)   (South Korea)

^b SURANAREE UNIVERSITY OF TECHNOLOGY   (Thailand)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

^d Thailand Ministry of Science and Technology   (Thailand)

^e University of California   (United States)

Author keywords

First principles calculations; Indium oxide; Vacancy defects

Indexed keywords

AB INITIO; ELECTRICAL BEHAVIORS; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; FORMATION ENERGIES; INDIUM OXIDE; P-TYPE; VACANCY DEFECTS;

BEHAVIORAL RESEARCH; CALCULATIONS; DEFECTS; DENSITY FUNCTIONAL THEORY; OXYGEN; OXYGEN VACANCIES;

INDIUM;

EID: 80255137116     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.03.051     Document Type: Conference Paper

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