Resistive switching characteristics of gallium oxide for nonvolatile memory application

Thin Solid Films

Volumn 529, Issue , 2013, Pages 200-204

  Yang, Jyun Bao ^a   Chang, Ting Chang ^a   Huang, Jheng Jie ^a   Chen, Shih Ching ^a   Yang, Po Chun ^a   Chen, Yu Ting ^a   Tseng, Hsueh Chih ^a   Sze, Simon M ^b   Chu, Ann Kuo ^a   Tsai, Ming Jinn ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Gallium oxide; Oxygen vacancies; RRAM

Indexed keywords

BIPOLAR RESISTANCE SWITCHING; CURRENT TRANSPORT MECHANISM; EFFECTIVE THICKNESS; GALLIUM OXIDES; HIGH-RESISTANCE STATE; NON-VOLATILE MEMORY APPLICATION; ORDERS OF MAGNITUDE; OXYGEN CONCENTRATIONS; RESISTANCE RATIO; RESISTANCE VALUES; RESISTIVE SWITCHING; RRAM; SWITCHING BEHAVIORS;

OXYGEN VACANCIES; PHOTOELECTRONS; RANDOM ACCESS STORAGE; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM;

EID: 84873733901     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.10.026     Document Type: Conference Paper

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