Fatigue-free Ruo2/Pb(zr,ti)O3/Ruo2 capacitor prepared by metalorganic chemical vapor deposition at 395 °C

Applied Physics Letters

Volumn 83, Issue 26, 2003, Pages 5506-5508

  Asano, Gouji ^a   Morioka, Hitoshi ^a   Funakubo, Hiroshi ^a   Shibutami, Tetsuo ^b   Oshima, Noriaki ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOSOH CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTALLIZATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTROCHEMICAL ELECTRODES; FATIGUE TESTING; FERROELECTRICITY; FLUORESCENCE; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REMANENCE; THERMAL EFFECTS; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

COERCIEVE FIELDS; HIGH DENSITY ELECTRODES; PIEZOELECTRIC FILMS;

MOS CAPACITORS;

EID: 0942277753     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1635964     Document Type: Article

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