Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure

Thin Solid Films

Volumn 519, Issue 5, 2010, Pages 1536-1539

  Feng, Li Wei ^a   Chang, Yao Feng ^a   Chang, Chun Yen ^a   Chang, Ting Chang ^b,c   Wang, Shin Yuan ^a   Chiang, Pei Wei ^a   Lin, Chao Cheng ^d   Chen, Shih Ching ^b   Chen, Shih Cheng ^e  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^e NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

FeOx; Resistance switching

Indexed keywords

CURRENT TRANSPORT; FEOX; FORMING PROCESS; HIGH VOLTAGE BIAS; METAL STRUCTURES; METAL-OXIDE; OXIDE DEPOSITION; OXYGEN IONS; RESISTANCE SWITCHING; RESISTANCE SWITCHING EFFECT; SILICON OXIDE LAYERS; TETRA-ETHYL-ORTHO-SILICATE; TRANSITION LAYERS;

IRON OXIDES; OXYGEN; PLASMA DEPOSITION; SILICON COMPOUNDS; SILICON OXIDES; SWITCHING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER ELECTRON SPECTROSCOPY;

EID: 78649727526     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.08.165     Document Type: Conference Paper

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