Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices

Applied Physics Letters

Volumn 99, Issue 9, 2011, Pages

  Tsai, Yu Ting ^a   Chang, Ting Chang ^b   Huang, Wei Li ^a   Huang, Chih Wen ^d   Syu, Yong En ^b   Chen, Shih Cheng ^c   Sze, Simon M ^a   Tsai, Ming Jinn ^e   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^e INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; OPERATING CURRENTS; OPERATION CONDITIONS; PORTABLE ELECTRONICS; RESISTANCE SWITCHING; RESISTIVE SWITCHING; SWITCHING BEHAVIORS; SWITCHING EFFECT; SWITCHING OPERATIONS; VOLTAGE OPERATIONS;

CONDUCTIVE FILMS; SWITCHING SYSTEMS; TITANIUM NITRIDE;

SWITCHING;

EID: 80052534438     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3629788     Document Type: Article

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