Monitoring oxygen movement by raman spectroscopy of resistive random access memory with a graphene-inserted electrode

Nano Letters

Volumn 13, Issue 2, 2013, Pages 651-657

  Tian, He ^a,b   Chen, Hong Yu ^c   Gao, Bin ^c,d   Yu, Shimeng ^c   Liang, Jiale ^c   Yang, Yi ^a   Xie, Dan ^a   Kang, Jinfeng ^d   Ren, Tian Ling ^a   Zhang, Yuegang ^b,e   Wong, H S Philip ^c  

^a TSINGHUA UNIVERSITY   (China)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Stanford University   (United States)

^d PEKING UNIVERSITY   (China)

^e SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

filaments; Graphene; oxygen ions movement; Raman spectroscopy; resistive random access memory

Indexed keywords

ANALYSIS TOOLS; AREA MAPPING; OXYGEN IONS; RESET CURRENTS; RESISTIVE RANDOM ACCESS MEMORIES (RRAM); RESISTIVE RANDOM ACCESS MEMORY; SINGLE LAYER; SINGLE-POINT MEASUREMENT; SWITCHING MECHANISM;

FILAMENTS (LAMP); GRAPHENE; RAMAN SPECTROSCOPY;

OXYGEN;

GRAPHITE; OXIDE; OXYGEN;

ARTICLE; CHEMISTRY; ELECTRODE; IMPEDANCE; LASER; NANOTECHNOLOGY; RAMAN SPECTROMETRY;

ELECTRIC IMPEDANCE; ELECTRODES; GRAPHITE; LASERS; NANOTECHNOLOGY; OXIDES; OXYGEN; SPECTRUM ANALYSIS, RAMAN;

MLCS; MLOWN;

EID: 84873632663     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl304246d     Document Type: Article

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