A facile route to recover intrinsic graphene over large scale

ACS Nano

Volumn 6, Issue 9, 2012, Pages 7781-7788

  Shin, Dong Wook ^a   Lee, Hyun Myoung ^b   Yu, Seong Man ^a   Lim, Kwang Soo ^a   Jung, Jae Hoon ^b   Kim, Min Kyu ^a   Kim, Sang Woo ^a,b   Han, Jae Hee ^c   Ruoff, Rodney S ^a,d   Yoo, Ji Beom ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Gachon University College of Medicine   (South Korea)

^d The University of Texas at Austin   (United States)

Author keywords

buffed oxide etch (BOE); Fermi level; graphene; H 2O O 2 redox system; intrinsic properties; PMMA; transistor

Indexed keywords

BUFFED OXIDE ETCH (BOE); BUFFERED OXIDE ETCH; C-F BONDING; DOMINANT FACTOR; INTRINSIC PROPERTY; P-TYPE; P-TYPE DOPING; PMMA; REDOX SYSTEMS;

CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; ESTERS; FERMI LEVEL; FIELD EFFECT TRANSISTORS; RECOVERY; REDOX REACTIONS; TRANSISTORS;

GRAPHENE;

GRAPHITE; NANOMATERIAL; OXIDE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ISOLATION AND PURIFICATION; MATERIALS TESTING; PARTICLE SIZE; ULTRASTRUCTURE;

ELECTRIC CONDUCTIVITY; GRAPHITE; MATERIALS TESTING; NANOSTRUCTURES; OXIDES; PARTICLE SIZE;

EID: 84866687337     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn3017603     Document Type: Article

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