1-D simulation of a novel nonvolatile resistive random access memory device

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 53, Issue 12, 2006, Pages 2340-2348

  Meyer, René ^a,b   Kohlstedt, Hermann ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION ELECTRONS; DOPANT CONTENT; DRIFT-DIFFUSION TRANSPORT MECHANISM; INTERFACIAL LAYERS;

COMPUTER SIMULATION; DIFFUSION; ELECTRIC POTENTIAL; ELECTRONS; HYSTERESIS; MULTILAYERS; NONVOLATILE STORAGE; POISSON EQUATION; POLARIZATION;

FERROELECTRIC THIN FILMS;

ARTICLE; COMPUTER AIDED DESIGN; ELECTROCHEMISTRY; ELECTROMAGNETIC FIELD; EQUIPMENT; EQUIPMENT DESIGN; IMPEDANCE; INFORMATION RETRIEVAL; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR;

COMPUTER-AIDED DESIGN; ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; ELECTROMAGNETIC FIELDS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INFORMATION STORAGE AND RETRIEVAL; MATERIALS TESTING; NANOTECHNOLOGY; SEMICONDUCTORS;

EID: 33846221030     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2006.182     Document Type: Article

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