Leakage current correction in quasi-static C-V measurements

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2004, Pages 179-181

  Schmitz, J ^a   Weusthof, M H H ^a   Hof, A J ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; DIFFUSION; GATES (TRANSISTOR); MATHEMATICAL MODELS; MOS CAPACITORS; OXIDATION; POLYSILICON;

GATE DIELECTRICS; GATE LEAKAGE; THERMAL GATE OXIDATION;

LEAKAGE CURRENTS;

EID: 3042515096     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) physics and technology, John Wiley & Sons, New York 1982.
2. D. K. Schroer, Semiconductor Material and Device Characterization, John Wiley & Sons, New York 1998.
3. Agilent 4155C/4156C User's Guide Volume 2: measurement and analysis.
4. Agilent application note 4156-10: evaluation of gate oxides using a voltage step quasi-static CV method.
5. J. Schmitz and L. F. Tiemeijer, Trends in CMOS device characterization (invited), INFOS 2003.