Effects of hydrogen dilution on ZnO thin films fabricated via nitrogen-mediated crystallization

Japanese Journal of Applied Physics

Volumn 52, Issue 1 PART2, 2013, Pages

  Suhariadi, Iping ^a   Matsushima, Koichi ^a   Kuwahara, Kazunori ^a   Oshikawa, Koichi ^a   Yamashita, Daisuke ^a   Seo, Hyunwoong ^a   Uchida, Giichiro ^a   Kamataki, Kunihiro ^a   Koga, Kazunori ^a   Shiratani, Masaharu ^a   Bornholdt, Sven ^b   Kersten, Holger ^b   Wulff, Harm ^c   Itagaki, Naho ^a,d  

^a KYUSHU UNIVERSITY   (Japan)

^b UNIVERSITY OF KIEL   (Germany)

^c UNIVERSITY OF GREIFSWALD   (Germany)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AZO FILMS; CRYSTALLINITIES; DEPOSITED FILMS; GLASS SUBSTRATES; HYDROGEN DILUTION; LOW RESISTIVITY; RF-SPUTTERING; SUBSTRATE TEMPERATURE; XRD MEASUREMENTS; ZNO; ZNO FILMS; ZNO THIN FILM;

BUFFER LAYERS; DEPOSITS; ELECTRIC PROPERTIES; FLOW RATE; HYDROGEN; HYDROGENATION; NITRIDES; NITROGEN; OPTICAL FILMS; SUBSTRATES; ZINC OXIDE;

METALLIC FILMS;

EID: 84872870525     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.01AC08     Document Type: Article

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