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Journal of Electroceramics

Volumn 23, Issue 2-4, 2009, Pages 548-553

Effect of a hydrogen ratio in electrical and optical properties of hydrogenated Al-doped ZnO films

(6) Tark, S J a Ok, Y W a Kang, M G a Lim, H J a Kim, W M b Kim, D a

a Korea University (South Korea)

b Korea Institute of Science and Technology (South Korea)

Author keywords

Al doping; Hydrogenated; Rf magnetron sputtering; ZnO

Indexed keywords

AL-DOPED ZINC OXIDE; AL-DOPED ZNO; AL-DOPING; AZO FILMS; AZO THIN FILMS; CERAMIC TARGET; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PROPERTY; FLOW RATIOS; HYDROGEN RATIO; OPTICAL TRANSMISSIONS; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; VISIBLE RANGE; ZNO;

ALUMINUM; CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HYDROGENATION; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; MAGNETRONS; OPTICAL FILMS; OPTICAL PROPERTIES; THIN FILMS; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 73449144799 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-008-9532-0 Document Type: Article

Times cited : (44)

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