Monolayer graphene/hexagonal boron nitride heterostructure

Carbon

Volumn 54, Issue , 2013, Pages 396-402

  Jain, Nikhil ^a   Bansal, Tanesh ^a   Durcan, Christopher A ^a   Xu, Yang ^b   Yu, Bin ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC STRENGTHS; HEXAGONAL BORON NITRIDE (H-BN); METAL GATE ELECTRODES; METAL-GATE; N-TYPE DOPING; P-TYPE DOPING; WORK-FUNCTION DIFFERENCE;

BORON NITRIDE; CHARGE TRANSFER; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; MONOLAYERS; MULTILAYERS;

GRAPHENE;

EID: 84872852202     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2012.11.054     Document Type: Article

References (23)

1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, M.I. Katsnelson, and I.V. Grigorieva Two-dimensional gas of massless Dirac fermions in graphene Nature 438 2005 197 200
2. M.C. Lemme, T.J. Echtermeyer, M. Baus, and H. Kurz A graphene field-effect device IEEE Electron Device Lett 28 4 2007 282 284
3. A.A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, and F. Miao Superior thermal conductivity of single-layer graphene Nano Lett 8 2008 902 907
4. B. Briggs, B. Nagabhirava, G. Rao, R. Geer, H. Gao, and Y. Xu Electromechanical robustness of monolayer graphene with extreme bending Appl Phys Lett 97 2001 223102 223104
5. Y.-M. Lin, C. Dimitrakopoulos, K.A. Jenkins, D.B. Farmer, H.-Y. Chiu, and A. Grill 100-GHz Transistors from Wafer-Scale Epitaxial Graphene Science 327 2010 662
6. Yu T, Kim E, Jain N, Xu Y, Geer R, Yu B. Carbon-based interconnect: performance, scaling and reliability of 3D stacked multilayer graphene system. In: IEEE international electron devices meeting; 2011, pp. 751-4.
7. Z. Chen, W. Ren, L. Gao, B. Liu, S. Pei, and H.-M. Cheng Three-dimensional flexible and conductive interconnected graphene networks grown by chemical vapour deposition Nat Mater 10 2011 424 428
8. Han S-J, Valdes-Garcia A, Bol AA, Franklin AD, Farmer D, Kratschmer E, et al. Graphene technology with inverted-T gate and RF passives on 200 mm platform. In: IEEE international electron devices meeting; 2011, pp. 221-4.
9. 2 Nat Nanotechnol 3 2008 206 209
10. K.I. Bolotin, K.J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, and J. Hone Ultrahigh electron mobility in suspended graphene Solid State Commun 146 2008 351 355
11. J. Xue, J. Sanchez-Yamagishi, D. Bulmash, P. Jacquod, A. Deshpande, and K. Watanabe Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride Nat Mater 10 2011 282 285
12. C.R. Dean, A.F. Young, I. Meric, C. Lee, L. Wang, and S. Sorgenfei Boron nitride substrates for high-quality graphene electronics Nat Nanotechnol 5 2010 722 726
13. T. Yu, E.-K. Lee, B. Briggs, B. Nagabhirava, and B. Yu Bilayer Graphene System: Current-Induced Reliability Limit IEEE Electron Device Lett 31 2010 1155 1157
14. N. Jain, T. Bansal, C. Durcan, and B. Yu Graphene-based interconnects on hexagonal boron nitride substrate IEEE Electron Device Lett 33 2012 925 927
15. E.K. Sichel, R.E. Miller, M.S. Abrahams, and C.J. Buiocchi Heat capacity and thermal conductivity of hexagonal pyrolytic boron nitride Phys Rev B 13 10 1976 4607 4611
16. A.D. Liao, J.Z. Wu, X. Wang, K. Tahy, D. Jena, and H. Dai Thermally limited current carrying ability of graphene nanoribbons Phys Rev Lett 106 2011 256801 256803
17. M. Bokdam, P.A. Khomyakov, G. Brocks, Z. Zhong, and P.J. Kelly Electrostatic doping of graphene through ultrathin hexagonal boron nitride films Nano Lett 11 2011 4631 4635
18. G. Giovannetti, P.A. Khomyakov, G. Brocks, V.M. Karpan, J. van den Brink, and P.J. Kelly Doping graphene with metal contacts Phys Rev Lett 101 2008 026803
19. G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K.L. Shepard, and P. Kim Electron tunneling through atomically flat and ultrathin hexagonal boron nitride Appl Phys Lett 99 24 2011 243114 243116
20. H. Park, A. Wadehra, J.W. Wilkins, and A.H. Castro Neto Magnetic states and optical properties of single-layer carbon-doped hexagonal boron nitride Appl Phys Lett 100 25 2012 253115 253118
21. S. Okada, and M. Otani Stability and electronic structure of potassium-intercalated hexagonal boron nitride from density functional calculations Phys Rev B 81 23 2010 233401 233404
22. C. Shen, S.G. Mayorga, R. Biagioni, C. Piskoti, M. Ishigami, and A. Zettl Intercalation of hexagonal boron nitride by strong oxidizers and evidence for the metallic nature of the products J Solid State Chem 147 1 1999 74 81
23. E. Kim, N. Jain, Y. Xu, and B. Yu Logic inverter implemented with CVD-assembled graphene FET on hexagonal boron nitride IEEE Trans Nanotechnol 11 2012 619 623