Graphene-based interconnects on hexagonal boron nitride substrate

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 925-927

  Jain, Nikhil ^a   Bansal, Tanesh ^a   Durcan, Christopher ^a   Yu, Bin ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Breakdown power density; conduction; electrical annealing; graphene; hexagonal boron nitride (h BN); interconnects

Indexed keywords

ALTERNATIVE SUBSTRATES; DIRAC POINT; ELECTRICAL ANNEALING; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); MATERIAL SYSTEMS; PERFORMANCE LIMITS; PERFORMANCE METRICS; POSITIVE SHIFT; POWER DENSITIES;

BORON NITRIDE; HEAT CONDUCTION; INTERFACE STATES; INTERFACES (MATERIALS); OPTICAL INTERCONNECTS; SUBSTRATES;

GRAPHENE;

EID: 84862854865     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2196669     Document Type: Article

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