Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

Nanotechnology

Volumn 24, Issue 5, 2013, Pages

  Hwang, Jih Shang ^a   Liu, Tai Yan ^a   Chattopadhyay, Surjit ^b   Hsu, Geng Ming ^c   Basilio, Antonio M ^c   Chen, Han Wei ^a   Hsu, Yu Kuei ^c   Tu, Wen Hsun ^c   Lin, Yan Gu ^c   Chen, Kuei Hsien ^c   Li, Chien Cheng ^d   Wang, Sheng Bo ^d   Chen, Hsin Yi ^d   Chen, Li Chyong ^d  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL YANG MING UNIVERSITY   (Taiwan)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; DEFECT BANDS; EXPERIMENTAL CONDITIONS; GAN NANOWIRES; GAN THIN FILMS; GROWTH CONDITIONS; ION DOPING; LOW CRYSTALLINITY; PHOTOELECTROCHEMICAL HYDROGEN; PHOTOELECTROCHEMICALS; PHOTOGENERATED ELECTRONS; WIDE BAND GAP;

CONVERSION EFFICIENCY; ELECTRIC FIELDS; ELECTROCHEMISTRY; HYDROGEN PRODUCTION; NANOWIRES;

GALLIUM NITRIDE;

EID: 84872714478     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/5/055401     Document Type: Article

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