Photoelectrochemical properties of p-type GaN in comparison with n-type GaN

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 28-32, 2005, Pages

  Fujii, Katsushi ^a   Ohkawa, Kazuhiro ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Gallium nitride; P type; Photoelectrochemical cells; Photoelectrolysis; Semiconductor electrolyte contacts

Indexed keywords

ELECTROLYSIS; PHOTOCHEMICAL REACTIONS; PHOTOCURRENTS; PHOTOELECTROCHEMICAL CELLS;

P-TYPE; PHOTOELECTROLYSIS; SEMICONDUCTOR-ELECTROLYTE CONTACTS;

GALLIUM NITRIDE;

EID: 30344471067     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L909     Document Type: Article

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