Ultrafast VLS growth of epitaxial β- Ga2O3 nanowires

Nanotechnology

Volumn 20, Issue 43, 2009, Pages

  Auer, E ^a   Lugstein, A ^a   Loffler S ^a   Hyun, Y J ^a   Brezna, W ^a   Bertagnolli, E ^a   Pongratz, P ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH CONDITIONS; HEXAGONAL SYMMETRY; HIGH GROWTH RATE; NANORIBBONS; ULTRA-FAST; VAPOR-SOLID GROWTH MECHANISM; VLS GROWTH; VLS GROWTH MECHANISM;

ELECTRIC WIRE; GALLIUM; GOLD DEPOSITS; NANORODS; NANOWIRES; OXYGEN; VAPORS;

EPITAXIAL GROWTH;

ALUMINUM OXIDE; GALLIUM; NANOMATERIAL; NANORIBBON; NANOROD; NANOWIRE; OXYGEN;

ARTICLE; NANOTECHNOLOGY; PRIORITY JOURNAL; STRUCTURE ANALYSIS; SYNTHESIS; TEMPERATURE; VAPOR;

EID: 70349690317     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/43/434017     Document Type: Article

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