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Volumn 98, Issue 25, 2011, Pages

Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes

(8) Yerino, Christopher D a Zhang, Yu a Leung, Benjamin a Lee, Minjoo L a Hsu, Ta Cheng b Wang, Chun Kai b Peng, Wei Chih b Han, J a

a Yale University (United States)

b EPISTAR CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE DESIGN; ELECTROCHEMICAL PROCESS; MASS-TRANSPORT PROCESS; MICRO-SCALES; MONOCRYSTALLINE; NANO SCALE; NANOMEMBRANES; NANOPOROUS GAN; PROOF OF CONCEPT; ROOM TEMPERATURE; SHAPE TRANSFORMATION;

MESOPOROUS MATERIALS; NANOSTRUCTURES; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

EID: 79959578706 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3601861 Document Type: Article

Times cited : (43)

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