Broadband and omnidirectional antireflection employing disordered GaN nanopillars

Optics Express

Volumn 16, Issue 12, 2008, Pages 8748-8754

  Chiu, C H ^a   Yu, Peichen ^a   Kuo, H C ^a   Chen, C C ^a   Lu, T C ^a   Wang, S C ^a   Hsu, S H ^b   Cheng, Y J ^b   Chang, Y C ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; REFLECTION; REFRACTIVE INDEX;

ANTI-REFLECTION; ANTIREFLECTIVE CHARACTERISTICS; DIFFERENT HEIGHTS; INCIDENT ANGLES; P-POLARIZATION; REFRACTIVE INDEX GRADIENTS; RIGOROUS COUPLED WAVE ANALYSIS; WAVELENGTH RANGES;

NANOSTRUCTURES;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; LIGHT; METHODOLOGY; OPTICAL INSTRUMENTATION; PARTICLE SIZE; PHOTOMETRY; RADIATION SCATTERING; REFRACTOMETRY; ULTRASTRUCTURE;

COMPUTER SIMULATION; GALLIUM; LENSES; LIGHT; MODELS, CHEMICAL; NANOSTRUCTURES; PARTICLE SIZE; PHOTOMETRY; REFRACTOMETRY; SCATTERING, RADIATION;

EID: 45449095545     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.008748     Document Type: Article

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