Fermi level pinning by gap states in organic semiconductors

Physical Review Letters

Volumn 110, Issue 3, 2013, Pages

  Yogev, S ^a   Matsubara, R ^c   Nakamura, M ^c   Zschieschang, U ^b   Klauk, H ^b   Rosenwaks, Y ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; DENSITY OF STATE; FERMI LEVEL PINNING; GAP STATE; HEXAMETHYLDISILAZANE; KELVIN PROBE FORCE MICROSCOPY; ORDERS OF MAGNITUDE; PENTACENE FILM; PENTACENES; TRANSISTOR PERFORMANCE;

FERMI LEVEL; SELF ASSEMBLED MONOLAYERS; SILICA; THIN FILM TRANSISTORS; THIOPHENE;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 84872706778     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.110.036803     Document Type: Article

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