A molybdenum dithiolene complex as p-dopant for hole-transport materials: A multitechnique experimental and theoretical investigation

Chemistry of Materials

Volumn 22, Issue 2, 2010, Pages 524-531

  Qi, Yabing ^a   Sajoto, Tissa ^b   Kröger, Michael ^a,e   Kandabarow, Alexander M ^a,f   Park, Wunjun ^a,g   Barlow, Stephen ^b   Kim, Eung Gun ^b   Wielunski, Leszek ^c,d   Feldman, L C ^c,d   Bartynski, Robert A ^c,d   Brédas, Jean Luc ^b   Marder, Seth R ^b   Kahn, Antoine ^a  

^a Princeton University   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c RUTGERS UNIVERSITY   (United States)

^d RUTGERS UNIVERSITY   (United States)

^e INNOVATIONLAB   (Germany)

^f ZS Associates   (United States)

^g Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; DENSITY FUNCTIONAL THEORY CALCULATIONS; DEPLETION REGION; DITHIOLENE; DOPING CONCENTRATION; GOOD STABILITY; HOLE INJECTION; HOLE TRANSPORT MATERIALS; HOPPING TRANSPORT; HOST MATRICES; ORGANIC SEMICONDUCTOR; OXIDIZING AGENTS; RUTHERFORD BACK-SCATTERING; STRONG ENHANCEMENT; THEORETICAL INVESTIGATIONS; TRIFLUOROMETHYL; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; VARIABLE TEMPERATURE;

ACTIVATION ENERGY; DENSITY FUNCTIONAL THEORY; ELECTRON AFFINITY; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ETHANE; MOLYBDENUM; OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING;

MOLYBDENUM COMPOUNDS;

EID: 75249102537     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm9031623     Document Type: Article

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