Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability

Organic Electronics

Volumn 12, Issue 8, 2011, Pages 1370-1375

  Zschieschang, Ute ^a   Ante, Frederik ^a   Kälblein, Daniel ^a   Yamamoto, Tatsuya ^b   Takimiya, Kazuo ^b   Kuwabara, Hirokazu ^c   Ikeda, Masaaki ^c   Sekitani, Tsuyoshi ^d   Someya, Takao ^d   Nimoth, Jan Blochwitz ^e   Klauk, Hagen ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b HIROSHIMA UNIVERSITY   (Japan)

^c NIPPON KAYAKU CO LTD   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e NOVALED GmbH   (Germany)

Author keywords

Air stability; Bias stress stability; Organic thin film transistors

Indexed keywords

FIELD EFFECT TRANSISTORS; IONIZATION POTENTIAL; ORGANIC LIGHT EMITTING DIODES (OLED); STABILITY; THIN FILM CIRCUITS; THIN FILMS; THIOPHENE;

ACTIVE MATRIX DISPLAYS; AIR STABILITY; BIAS STRESS STABILITIES; FIELD-EFFECT MOBILITIES; ORGANIC THIN FILM TRANSISTORS; RING OSCILLATOR; SIGNAL PROPAGATION DELAYS; SMALL MOLECULES;

THIN FILM TRANSISTORS;

EID: 79957663033     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2011.04.018     Document Type: Article

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