Electric field-tunable BaxSr1-xTiO3 films with high figures of merit grown by molecular beam epitaxy

Applied Physics Letters

Volumn 101, Issue 25, 2012, Pages

  Mikheev, Evgeny ^a   Kajdos, Adam P ^a   Hauser, Adam J ^a   Stemmer, Susanne ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; BST THIN FILMS; DEPOSITION TECHNIQUE; DEVICE QUALITY FACTOR; FIGURES OF MERITS; PARAELECTRICS; STOICHIOMETRY CONTROL; TIO; TUNABILITIES; TUNABLE DEVICE;

DEPOSITION; DIELECTRIC LOSSES; ELECTRIC FIELDS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PLATINUM; STOICHIOMETRY;

EPITAXIAL FILMS;

EID: 84871750218     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773034     Document Type: Article

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