Dielectric properties of epitaxial Ba0.5 Sr0.5 TiO3 films on amorphous SiO2 on sapphire

Applied Physics Letters

Volumn 87, Issue 7, 2005, Pages

  Li, H ^a   Finder, J ^a   Liang, Y ^b   Gregory, R ^b   Qin, W ^b  

^a MOTOROLA INC   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELEVATED TEMPERATURE; INTERLAYERS; LOCAL STRAIN; POST-GROWTH ANNEAL;

AMORPHOUS MATERIALS; ANNEALING; BARIUM COMPOUNDS; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES; MOLECULAR BEAM EPITAXY; OXIDATION; PERMITTIVITY; SAPPHIRE; SILICA; TEMPERATURE DISTRIBUTION;

METALLIC FILMS;

EID: 24144439321     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2011774     Document Type: Article

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