Microwave loss mechanisms in Ba0.25Sr0.75TiO 3 thin film varactors

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4642-4649

  Vorobiev, A ^a,c   Rundqvist, P ^a   Khamchane, K ^a   Gevorgian, S ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Ericsson Microwave Systems AB   (Sweden)

^c INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BARIUM COMPOUNDS; CHARGE CARRIERS; FREQUENCIES; MICROSTRUCTURE; MICROWAVES; SCHOTTKY BARRIER DIODES; SILICON; SUBSTRATES; THIN FILMS;

CHARGED DEFECTS; ENERGY BARRIERS; MICROWAVE LOSSES; SPACE-CHARGE LIMITED CURRENT (SCLC);

VARACTORS;

EID: 7644224825     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1789631     Document Type: Article

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