Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

Applied Physics Letters

Volumn 101, Issue 25, 2012, Pages

  Xiao, Y G ^a   Chen, Z J ^a   Tang, M H ^a   Tang, Z H ^a   Yan, S A ^a   Li, J C ^b   Gu, X C ^b   Zhou, Y C ^a   Ouyang, X P ^c  

^a XIANGTAN UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

^c NORTHWEST INSTITUTE OF NUCLEAR TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; ELECTROSTATIC CONTROL; FAST SWITCHING; FERROELECTRIC FIELD EFFECT TRANSISTORS; GATE ELECTRODES; LOW-POWER DISSIPATION; METALFERROELECTRIC-SEMICONDUCTOR; NEGATIVE CAPACITANCE; PERFORMANCE IMPROVEMENTS; SUBTHRESHOLD SWING; SURROUNDING-GATE;

CAPACITANCE; FERROELECTRICITY; SWITCHING CIRCUITS;

FIELD EFFECT TRANSISTORS;

EID: 84871746013     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4772982     Document Type: Article

References (22)

1. Y. Taur, IEEE Electron Device Lett. 21, 245 (2000). 10.1109/55.841310
2. Y. Taur, X. Liang, W. Wang, and H. Lu, IEEE Electron Device Lett. 25, 107 (2004). 10.1109/LED.2003.822661
3. J.-P. Colinge, Solid-State Electron. 48, 897 (2004). 10.1016/j.sse.2003. 12.020
4. D. Jiménez, B. Iñiguez, J. Suñé, L. F. Marsal, J. Pallarès, J. Roig, and D. Flores, IEEE Electron Device Lett. 25, 571 (2004). 10.1109/LED.2004.831902
5. B. Iniguez, D. Jimenez, J. Roig, H. A. Hamid, L. F. Marsal, and J. Pallares, IEEE Trans. Electron Devices 52, 1868 (2005). 10.1109/TED.2005.852892
6. O. Moldovan, B. Iñiguez, D. Jiménez, and J. Roig, IEEE Trans. Electron Devices 54, 162 (2007). 10.1109/TED.2006.887213
7. B. Yu, W. Y. Lu, H. X. Lu, and Y. Taur, IEEE Trans. Electron Devices 54, 492 (2007). 10.1109/TED.2006.890264
8. B. Yu, H. X. Lu, M. J. Liu, and Y. Taur, IEEE Trans. Electron Devices 54, 2715 (2007). 10.1109/TED.2007.904410
9. K. H. Cho, K. H. Yeo, Y. Y. Yeoh, S. D. Suk, M. Li, J. M. Lee, M. S. Kim, D. W. Kim, D. Park, B. H. Hong, Y. C. Jung, and S. W. Hwang, Appl. Phys. Lett. 92, 052102 (2008). 10.1063/1.2840187
10. F. Liu, J. He, L. Zhang, J. Zhang, J. Hu, C. Ma, and M. Chan, IEEE Trans. Electron Devices 55, 2187 (2008). 10.1109/TED.2008.926735
11. I. Ferain, C. A. Colinge, and J.-P. Colinge, Nature 479, 310 (2011). 10.1038/nature10676
12. S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008). 10.1021/nl071804g
13. G. A. Salvatore, D. Bouvet, and A. M. Ionescu, in IEDM Technical Digest (IEEE, 2008), pp. 1-4.
14. A. Rusu, G. A. Salvatore, D. Jimenez, and A. M. Ionescu, in IEDM Technical Digest (IEEE, 2010), pp. 16.3.1-16.3.4.
15. A. I. Khan, D. Bhowmik, P. Yu, S. J. Kim, X. Q. Pan, R. Ramesh, and S. Salahuddin, Appl. Phys. Lett. 99, 113501 (2011). 10.1063/1.3634072
16. G. A. Salvatore, A. Rusu, and A. M. Ionescu, Appl. Phys. Lett. 100, 163504 (2012). 10.1063/1.4704179
17. L. D. Landau and I. M. Khalatnikov, Dokl. Akad. Nauk 96, 469 (1954).
18. V. C. Lo, J. Appl. Phys. 94, 3353 (2003). 10.1063/1.1598275
19. W. Zhang and K. Bhattacharya, Acta Mater. 53, 185 (2005). 10.1016/j.actamat.2004.09.016
20. K. M. Rabe, C. H. Ahn, and J.-M. Triscone, Physics of Ferroelectrics: A Modern Perspective (Springer, Berlin, 2007).
21. D. Jiménez, E. Miranda, and A. Godoy, IEEE Trans. Electron Devices 57, 2405 (2010). 10.1109/TED.2010.2062188
22. Y. G. Xiao, M. H. Tang, J. C. Li, B. Jiang, and J. He, Microelectron. Reliab. 52, 757 (2012) 10.1016/j.microrel.2011.11.006.