Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 162-165

  Moldovan, Oana ^a   Iñiguez, Benjamin ^a   Jiménez, David ^b   Roig, James ^c  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c LAAS CNRS   (France)

Author keywords

Compact device modelling; Intrinsic capacitances; Surrounding gate (SGT) MOSFET

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC CURRENTS; GATES (TRANSISTOR); MATHEMATICAL MODELS; POISSON EQUATION;

COMPACT DEVICE MODELLING; DRAIN CURRENT; SURROUNDING-GATE MOSFET;

MOSFET DEVICES;

EID: 33846090120     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887213     Document Type: Article

References (10)

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