Analytic charge model for surrounding - Gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 3, 2007, Pages 492-496

  Yu, Bo ^a   Lu, Wei Yuan ^a   Lu, Huaxin ^a   Taur, Yuan ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Compact model; MOSFETs; Surrounding gate (SG)

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; GATES (TRANSISTOR); POISSON EQUATION;

CHARGE MODEL; COMPACT MODEL; CURRENT CONTINUITY EQUATION; SURROUNDING GATE; WARD-DUTTON LINEAR CHARGE PARTITION;

MOSFET DEVICES;

EID: 33947613045     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.890264     Document Type: Article

References (9)

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