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Volumn 48, Issue 8 Part 1, 2009, Pages 0810021-0810025

Drain current stability and controllability of threshold voltage and subthreshold current in a multi-mesa-channel AlGaN/GaN high electron mobility transistor

(2) Ohi, Kota a Hashizume, Tamotsu a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BREAKDOWN CHARACTERISTICS; BREAKDOWN VOLTAGE; CURRENT DRIVABILITY; CURRENT STABILITY; DRAIN ELECTRODES; FIELD EFFECTS; GATE ELECTRODES; GATE REGION; KNEE VOLTAGE; SATURATION REGION; SUB-THRESHOLD CURRENT; SUBTHRESHOLD SLOPE;

DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; METALLIC MATRIX COMPOSITES; PERIODIC STRUCTURES; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77952718670 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.081002 Document Type: Article

Times cited : (82)

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