High-electron-mobility transistors based on INALN/GAN nanoribbons

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1680-1682

  Azize, Mohamed ^a   Hsu, Allen L ^a   Saadat, Omair I ^a   Smith, Matthew ^a   Gao, Xiang ^b   Guo, Shiping ^b   Gradecak, Silvija ^a   Palacios, Toms ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b IQE INC   (United States)

Author keywords

Al2 O3 strain passivation layer; High electron mobility transistor (HEMT); InAlN GaN nanoribbons (NRs); SiC substrate

Indexed keywords

CLOSE PROXIMITY; MATERIAL SYSTEMS; MECHANICAL STRESS; NANORIBBONS; PLANAR DEVICES; PLANAR STRUCTURE; SIC SUBSTRATES; SURFACE PASSIVATION; TOP-DOWN TECHNOLOGY; TRANSMISSION LINE MODELS;

ELECTRIC PROPERTIES; FABRICATION; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; STRESSES; TRANSPORT PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 81855173457     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2170149     Document Type: Article

References (16)

1. D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, "300-GHz InAlN/GaN HEMTs with InGaN back barrier," IEEE Electron Device Lett., vol. 32, no. 11, pp. 1525-1527, Nov. 2011.
2. K. Shinohara, D. Regan, I. Milosavljevic, A. L. Corrion, D. F. Brown, P. J. Willadsen, C. Butler, A. Schmitz, S. Kim, V. Lee, A. Ohoka, P. M. Asbeck, and M. Micovic, "Electron velocity enhancement in laterally scaled GaN DH-HEMTs with fT of 260 GHz," IEEE Electron Device Lett., vol. 32, no. 8, pp. 1074-10176, Aug. 2011.
3. W. Lu, P. Xie, and C.M. Lieber, "Nanowire transistor performance," IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 2859-2876, Nov. 2008.
4. B. Yu, Y. Yuan, J. Song, and Y. Taur, "A two-dimensional analytical solution for short channel effect in nanowire MOSFETs," IEEE Trans. Electron Devices, vol. 56, no. 10, pp. 2357-2362, Oct. 2009.
5. Y. Li, J. Xiang, F. Qian, S. Gradecak, Y. Wu, H. Yan, D. A. Blom, and C. M. Lieber, "Dopant-free GaN/AlN/AlGaN radial nanowire heterostructure as high electron mobility transistors," Nano Lett., vol. 6, no. 7, pp. 1468-1473, Jun. 2006.
6. M. Azize and T. Palacios, "Top-down fabrication of AlGaN/GaN nanoribbons," Appl. Phys. Lett., vol. 98, no. 4, p. 042 103, Jan. 2011.
7. S. Vandenbrouck, K. Madjour, D. Théron, Y. Dong, Y. Li, C. M. Lieber, and C. Gaquiere, "12 GHz fmax GaN/AlN/AlGaN nanowire MISFET," IEEE Electron Device Lett., vol. 30, no. 4, pp. 322-324, Apr. 2009.
8. T. Zimmermann, Y. Cao, J. Guo, X. Luo, D. Jena, and H. Xing, "Topdown AlN/GaN enhancement-& depletion-mode nanoribbon HEMTs," in Proc. 67th Annu. Device Res. Conf., Dec. 2009, pp. 129-130.
9. K. Ohi and T. Hashizume, "Drain current stability and controllability of threshold voltage and subthreshold current in a multi-mesa-channel Al-GaN/GaN high electron mobility transistor," Jpn. J. Appl. Phys., vol. 48, no. 8, p. 081 002, Aug. 2009.
10. J. W. Chung, O. I. Saadat, J. M. Tirado, X. Gao, S. Guo, and T. Palacios, "Gate-recessed InAlN/GaN HEMTs on SiC substrate with Al2O3 passivation," IEEE Electron Device Lett., vol. 30, no. 9, pp. 904-906, Sep. 2009.
11. H. Wang, J. W. Chung, X. Gao, S. Guo, and T. Palacios, " Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance," Phys. Stat. Sol. (C), vol. 7, no. 10, pp. 2440-2444, Jun. 2010.
12. S. C. Seel, C. V. Thompson, S. J. Hearne, and J. A. Floro, "Tensile stress evolution during deposition of Volmer-Weber thin films," J. Appl. Phys., vol. 88, no. 12, pp. 7079-7088, Dec. 2000.
13. T. Böttcher, S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and J. S. Speck, "The role of high-temperature island coalescence in the development of stresses in GaN films," Appl. Phys. Lett., vol. 78, no. 14, pp. 1976-1978, Apr. 2001.
14. J. Kuzmik, "InAlN/(In)GaN high electron mobility transistors: Some aspects of the quantum well heterostructure proposal," Semicond. Sci. Technol., vol. 17, no. 6, pp. 540-544, Jun. 2002.
15. D. S. Lee, X. Gao, S. Guo, and T. Palacios, "InAlN/GaN HEMTs with AlGaN back barriers," IEEE Electron Device Lett., vol. 32, no. 5, pp. 617-619, May 2011.
16. H. Sun, A. R. Alt, H. Benedickter, E. Feltin, J. F. Carlin, M. Gonschorek, N. R. Grandjean, and C. R. Bolognesi, "205-GHz (Al,In)N/GaN HEMTs," IEEE Electron Device Lett., vol. 31, no. 9, pp. 957-959, Sep. 2010.