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Volumn 98, Issue 4, 2011, Pages

Top-down fabrication of AlGaN/GaN nanoribbons

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ELECTRICAL AND STRUCTURAL PROPERTIES; MECHANICAL STRESS; NANORIBBONS; PLANAR STRUCTURE; SILICON SUBSTRATES; SURFACE PASSIVATION; TOP-DOWN FABRICATION; TOP-DOWN TECHNOLOGY;

EID: 79551639026     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3544048     Document Type: Article
Times cited : (51)

References (16)
  • 4
    • 77952718670 scopus 로고    scopus 로고
    • 0021-4922, 10.1143/JJAP.48.081002
    • K. Ohi and T. Hashizume, Jpn. J. Appl. Phys. 0021-4922 48, 081002 (2009). 10.1143/JJAP.48.081002
    • (2009) Jpn. J. Appl. Phys. , vol.48 , pp. 081002
    • Ohi, K.1    Hashizume, T.2
  • 10
    • 77955799143 scopus 로고    scopus 로고
    • 0021-8979, 10.1063/1.3463150
    • M. Azize and T. Palacios, J. Appl. Phys. 0021-8979 108, 023707 (2010). 10.1063/1.3463150
    • (2010) J. Appl. Phys. , vol.108 , pp. 023707
    • Azize, M.1    Palacios, T.2
  • 13
    • 23744495048 scopus 로고    scopus 로고
    • Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT
    • DOI 10.1016/j.mejo.2005.02.121, PII S0026269205001291
    • M. A. Mastro, J. R. LaRoche, N. D. Bassima, and C. R. Eddy, Jr., Microelectron. J. 0026-2692 36, 705 (2005). 10.1016/j.mejo.2005.02.121 (Pubitemid 41119143)
    • (2005) Microelectronics Journal , vol.36 , Issue.8 , pp. 705-711
    • Mastro, M.A.1    LaRoche, J.R.2    Bassim, N.D.3    Eddy Jr., C.R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.