Top-Down AlN/GaN enhancement- & depletion-mode nanoribbon HEMTs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 129-130

  Zimmermann, Tom ^a   Cao, Yu ^a   Guo, Jia ^a   Luo, Xiangning ^a   Jena, Debdeep ^a   Xing, Huili ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSPORT; DEVICE PERFORMANCE; ELECTROSTATIC EFFECT; ENHANCEMENT MODES; ENHANCEMENT-MODE; EPITAXIALLY GROWN; GAN NANOWIRES; HIGH FREQUENCY; HIGH POWER; III-V NITRIDES; NANO SCALE; NANORIBBONS; TOPDOWN;

ELECTROSTATICS; GALLIUM NITRIDE; NANOWIRES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 76549109436     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354874     Document Type: Conference Paper

References (1)

1. max GaN/AlN/AlGaN Nanowire MISFET", IEEE EDL, 30(4), p. 322, 2009.