Polarization effects on gate leakage in InAlN/AlN/GaN high-electron- mobility transistors

Applied Physics Letters

Volumn 101, Issue 25, 2012, Pages

  Ganguly, Satyaki ^a   Konar, Aniruddha ^a   Hu, Zongyang ^a   Xing, Huili ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT FLOWS; DIRECT TUNNELING; FOWLER-NORDHEIM TUNNELING; GATE LEAKAGES; GATE-LEAKAGE CURRENT; HIGH-VOLTAGES; III-NITRIDE; LATTICE-MATCHED; NON-POLAR; PHYSICAL PARAMETERS; POLARIZATION EFFECT; POLARIZATION FIELD; REVERSE BIAS VOLTAGE; REVERSE-BIAS; THERMAL EMISSIONS; TRAP STATE;

GATE DIELECTRICS; GERMANIUM; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; NITRIDES;

POLARIZATION;

EID: 84871732183     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773244     Document Type: Article

References (18)

1. J. Kuzmík, IEEE Electron Device Lett. 22, 510 (2001). 10.1109/55.962646
2. R. Butte, J.-F. Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H. J. Buehlmann, S. Christopoulos, H. von Högersthal, A. J. D. Grundy, M. Mosca, C. Pinquier, M. A. Py, F. Demangeot, J. Frandon, P. G. Lagoudakis, J. J. Baumberg, and N. Grandjean, J. Phys. D: Appl. Phys. 40, 6328 (2007). 10.1088/0022-3727/40/20/S16
3. J. Kuzmík, A. Kostopoulos, G. Konstantinidis, J.-F. Carlin, A. Georgakilas, and D. Pogany, IEEE Trans. Electron Devices 53, 422 (2006). 10.1109/TED.2005.864379
4. J. G. Simmons, J. Phys. D: Appl. Phys. 4, 613 (1971). 10.1088/0022-3727/4/5/202
5. J. Frenkel, Phys. Rev. 54, 647 (1938). 10.1103/PhysRev.54.647
6. E. Arslan, S. Bütün, and E. Ozbay, Appl. Phys. Lett. 94, 142106 (2009). 10.1063/1.3115805
7. S. Pandey, D. Cavalcoli, B. Fraboni, A. Cavallini, T. Brazzini, and F. Calle, Appl. Phys. Lett. 100, 152116 (2012). 10.1063/1.4703938
8. E. J. Miller, X. Z. Dang, and E. T. Yu, J. Appl. Phys. 88, 5951 (2000). 10.1063/1.1319972
9. D. Yan, H. Lu, D. Cao, D. Chen, R. Zhang, and Y. Zheng, Appl. Phys. Lett. 97, 153503 (2010). 10.1063/1.3499364
10. I. H. Tan, G. L. Snider, L. D. Chang, and E. L. Hu, J. Appl. Phys. 68, 4071 (1990). 10.1063/1.346245
11. S. M. Sze, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 1981), Chap..
12. C. Wood and D. Jena, Polarization Effects in Semiconductors, 1st ed. (Springer, New York, 2007), Chap..
13. J. Song, F. J. Xu, X. D. Tan, F. Lin, C. C. Huang, L. P. You, T. J. Yu, X. Q. Wang, B. Shen, K. Wei, and X. Y. Liu, Appl. Phys. Lett. 97, 232106 (2010). 10.1063/1.3525713
14. H. Zhang, E. J. Miller, and E. T. Yu, J. Appl. Phys. 99, 023703 (2006). 10.1063/1.2159547
15. D. Donoval, A. Chvála, R. Šramatý, J. Kováč, J.-F. Carlin, N. Grandjean, G. Pozzovivo, J. Kuzmík, D. Pogany, G. Strasser, and P. Kordoš, Appl. Phys. Lett. 96, 223501 (2010). 10.1063/1.3442486
16. L. Zheng, R. P. Joshi, and C. Fazi, J. Appl. Phys. 85, 3701 (1999). 10.1063/1.369735
17. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969). 10.1063/1.1657043
18. D. Qiao, L. S. Yu, S. S. Lau, J. M. Redwing, J. Y. Lin, and H. X. Jiang, J. Appl. Phys. 87, 801 (2000). 10.1063/1.371944