Recombination activity of interstitial chromium and chromium-boron pairs in silicon

Journal of Applied Physics

Volumn 102, Issue 12, 2007, Pages

  Schmidt, Jan ^a   Krain, Rafael ^a   Bothe, Karsten ^a   Pensl, Gerhard ^b   Beljakowa, Svetlana ^b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CALIBRATION; CHROMIUM; CRYSTALLINE MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS;

CALIBRATION FUNCTION; DEFECT ENERGY LEVEL; DEFECT PARAMETERS; RECOMBINATION ACTIVITY; THERMAL DISSOCIATION;

SILICON WAFERS;

EID: 37549058378     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2822452     Document Type: Article

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