Temperature- and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2178-2180

  Schmidt, Jan ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

DEFECT CENTERS;

CRYSTAL DEFECTS;

EID: 0037475006     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563830     Document Type: Article

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