Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition

Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

  Gammon, P M ^a   Perez Tomas A ^b   Jennings, M R ^a   Shah, V A ^a   Boden, S A ^c   Davis, M C ^a   Burrows, S E ^a   Wilson, N R ^a   Roberts, G J ^a   Covington, J A ^a   Mawby, P A ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CONCENTRATION OF; CRYSTALLINITIES; CURRENT-VOLTAGE MEASUREMENTS; DEPOSITION PARAMETERS; DOPANT SPECIES; ELECTRICAL NATURE; FERMI LEVEL PINNING; FLAT SURFACES; HELIUM ION; HETEROJUNCTION DIODES; HETEROJUNCTION INTERFACES; HIGH-TEMPERATURE DEPOSITION; IDEAL DIODES; INHOMOGENEITIES; INTERFACE CHARACTERISTIC; INTERFACE STATE; LOW RESISTANCE; MBE GROWTH; MESA-DIODES; N-TYPE LAYERS; ON-RESISTANCE; P-TYPE; POLYCRYSTALLINE; REVERSE CHARACTERISTICS; SCHOTTKY BARRIER HEIGHTS; SIMPLE MODEL; SURFACE QUALITIES; VARYING TEMPERATURE;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; GERMANIUM; HELIUM; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; TWO DIMENSIONAL; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 77954208899     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3449057     Document Type: Article

References (36)

1. www.cree.com, www.infineon.com, and www.st.com.
2. V. V. Afanasev, M. Bassler, G. Pensl, and M. Schulz, Phys. Status Solidi A PSSABA 0031-8965 162, 321 (1997). 10.1002/1521-396X(199707)162:1<321::AID- PSSA321>3.0.CO;2-F
3. M. Bassler, G. Pensl, and V. V. Afanasev, Diamond Relat. Mater. DRMTE3 0925-9635 6, 1472 (1997). 10.1016/S0925-9635(97)00074-5
4. A. Pérez-Tomás, M. R. Jennings, P. M. Gammon, G. J. Roberts, P. A. Mawby, J. Millán, P. Godignon, J. Montserrat, and N. Mestres, Microelectron. Eng. MIENEF 0167-9317 85, 4704 (2008).
5. L. Chen, O. J. Guy, M. R. Jennings, P. Igic, and P. A. Mawby, Solid-State Electron. SSELA5 0038-1101 51, 662 (2007). 10.1016/j.sse.2007.02.026 (Pubitemid 46764365)
6. M. Hoshi, T. Hayashi, H. Tanaka, and S. Yamagami, Power Conversion Conference '07, 2007 (unpublished), p. 373.
7. A. Pérez-Tomás, M. Lodzinski, O. J. Guy, M. R. Jennings, M. Placidi, J. Llobet, P. M. Gammon, M. Davis, J. A. Covington, S. E. Burrows, and P. A. Mawby, Appl. Phys. Lett. APPLAB 0003-6951 94, 103510 (2009). 10.1063/1.3099018
8. H. Tanaka, T. Hayashi, Y. Shimoida, S. Yamagami, S. Tanimoto, and M. Hoshi, Proceedings of ISPSD '05, 2005 (unpublished), p. 287.
9. A. Pérez-Tomás, M. R. Jennings, M. Davis, V. Shah, T. Grasby, J. A. Covington, and P. A. Mawby, Microelectron. J. MICEB9 0026-2692 38, 1233 (2007). 10.1016/j.mejo.2007.09.019 (Pubitemid 350160750)
10. A. Pérez-Tomás, M. R. Jennings, M. Davis, J. A. Covington, P. A. Mawby, V. Shah, and T. Grasby, J. Appl. Phys. JAPIAU 0021-8979 102, 014505 (2007). 10.1063/1.2752148 (Pubitemid 47114595)
11. M. R. Jennings, A. Pérez-Tomás, O. J. Guy, R. Hammond, S. E. Burrows, P. M. Gammon, M. Lodzinski, J. A. Covington, and P. A. Mawby, Electrochem. Solid-State Lett. ESLEF6 1099-0062 11, H306 (2008). 10.1149/1.2976158
12. P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, G. J. Roberts, M. C. Davis, V. A. Shah, S. E. Burrows, N. R. Wilson, J. A. Covington, and P. A. Mawby, Appl. Phys. Lett. APPLAB 0003-6951 93, 112104 (2008). 10.1063/1.2987421
13. P. M. Gammon, A. Pérez-Tomás, V. A. Shah, G. J. Roberts, M. R. Jennings, J. A. Covington, and P. A. Mawby, J. Appl. Phys. JAPIAU 0021-8979 106, 093708 (2009). 10.1063/1.3255976
14. W. P. Bai, N. Lu, J. Liu, A. Ramirez, D. L. Kwong, D. Wristers, A. Ritenour, L. Lee and D. Antoniadis, Tech. Dig. VLSI Symp. 2003, 121.
15. R. T. Tung, Phys. Rev. B PRBMDO 0163-1829 45, 13509 (1992). 10.1103/PhysRevB.45.13509
16. J. P. Sullivan, R. T. Tung, M. R. Pinto, and W. R. Graham, J. Appl. Phys. JAPIAU 0021-8979 70, 7403 (1991). 10.1063/1.349737
17. R. T. Tung, Appl. Phys. Lett. APPLAB 0003-6951 58, 2821 (1991). 10.1063/1.104747
18. W. Kern and D. A. Poutinen, RCA Rev. RCARCI 0033-6831 31, 187 (1970).
19. W. T. Anderson, A. Christou, and J. E. Davey, IEEE J. Solid-State Circuits IJSCBC 0018-9200 SC13, 4430 (1978).
20. J. Morgan, J. Notte, R. Hill, and B. Ward, Microscopy Today 14, 24 (2006).
21. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998), p. 158.
22. G. S. Marlow and M. B. Das, Solid-State Electron. SSELA5 0038-1101 25, 91 (1982). 10.1016/0038-1101(82)90036-3
23. M. Shur, S. Rumyantsev, and M. Levinshtein, SiC Materials And Devices (World Scientific, Washington, D.C., 2006), Vol. 1, p. 158.
24. S. K. Cheung and N. W. Cheung, Appl. Phys. Lett. APPLAB 0003-6951 49, 85 (1986). 10.1063/1.97359
25. P. Godignon, R. Perez, D. Tournier, N. Mestres, H. Mank, and D. Turover, MRS Symposia Proceedings No. 815 (Materials Research Society, Pittsburgh, 2004).
26. F. Roccaforte, F. L. Via, V. Raineri, R. Pierobon, and E. Zanoni, J. Appl. Phys. JAPIAU 0021-8979 93, 9137 (2003). 10.1063/1.1573750
27. R. T. Tung, Mater. Sci. Eng. MSCEAA 0025-5416 35, 1 (2001). 10.1016/S0927-796X(01)00037-7
28. A. M. Goodman, J. Appl. Phys. JAPIAU 0021-8979 34, 329 (1963). 10.1063/1.1702608
29. S. J. Fonash, J. Appl. Phys. JAPIAU 0021-8979 54, 1966 (1983). 10.1063/1.332251 (Pubitemid 13544308)
30. J. Tersoff, Phys. Rev. Lett. PRLTAO 0031-9007 52, 465 (1984). 10.1103/PhysRevLett.52.465
31. W. Mönch, Appl. Surf. Sci. ASUSEE 0169-4332 117-118, 380 (1997). 10.1016/S0169-4332(97)80111-0
32. W. Mönch, Electronic Properties of Semiconductor Interfaces (Springer, Berlin, 2004).
33. P. Chattopadhyay and S. Sanyal, Appl. Surf. Sci. ASUSEE 0169-4332 89, 205 (1995). 10.1016/0169-4332(95)00020-8
34. W. Schottky, Z. Phys. ZEPYAA 0044-3328 113, 367 (1939). 10.1007/BF01340116
35. N. F. Mott, Proc. R. Soc. London, Ser. A PRLAAZ 0950-1207 171, 27 (1939). 10.1098/rspa.1939.0051
36. H. J. Im, Y. Ding, J. P. Pelz, and W. J. Choyke, Phys. Rev. B PRBMDO 0163-1829 64, 075310 (2001). 10.1103/PhysRevB.64.075310