Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Sun, He Hui ^a   Guo, Feng Yun ^a   Li, Deng Yue ^a   Wang, Lu ^b   Wang, Dong Bo ^a   Zhao, Lian Cheng ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

Interface; Intersubband; Quantum wells; TEM

Indexed keywords

ALUMINUM; ALUMINUM GALLIUM NITRIDE; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDUSTRIAL CHEMICALS; INTERFACES (MATERIALS); LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MODULATORS; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTOR ALLOYS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; HIGH DISLOCATION DENSITY; HIGH RESOLUTION X RAY DIFFRACTION; INTER-SUBBAND; INTERSUBBAND ABSORPTION; MID-INFRARED SPECTRAL RANGE; SURFACE DEPRESSIONS; TRANSMISSION ELECTRON;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84871216774     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-649     Document Type: Article

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