Effects of Al-containing Intermediate III-nitride Strained Multilayers on the Threading Dislocation Density and Optical Properties of GaN Films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 11, 2003, Pages 6823-6826

  Gong, Jyh Rong ^a   Tseng, Su Fen ^a   Huang, Cheng Wei ^a   Tsai, Yu Li ^a   Liao, Wei Tsai ^a   Wang, Cheng Liang ^a   Shi, Bing Hong ^a   Lin, Tai Yuan ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN; AlN AlGaN; AlN GaN; EPD; GaN; TDs

Indexed keywords

ALUMINUM NITRIDE; DISLOCATIONS (CRYSTALS); ETCHING; MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

ETCHING PIT DENSITY (EPD); ION MILLING; THREADING DISLOCATIONS (TD);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 1642454699     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6823     Document Type: Article

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