Polarization doping: Reservoir effects of the substrate in AlGaN graded layers

Journal of Applied Physics

Volumn 112, Issue 5, 2012, Pages

  Li, Shibin ^a   Ware, Morgan E ^b   Wu, Jiang ^b   Kunets, Vasyl P ^b   Hawkridge, Mike ^b   Minor, Paul ^b   Wang, Zhiming ^a,b   Wu, Zhiming ^a   Jiang, Yadong ^a   Salamo, Gregory J ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN FILMS; ALLOY SCATTERING; AS-GROWN; BACKGROUND ELECTRON CONCENTRATION; CHARGED DISLOCATIONS; DOPED FILMS; ELECTRON SHEET CONCENTRATION; GAN SUBSTRATE; GAN TEMPLATE; GRADED FILMS; GRADED LAYERS; POLARIZATION DOPING; QUALITATIVE MODELING; RESERVOIR EFFECT; SEMI-INSULATING; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

CARRIER CONCENTRATION; ELECTRON MOBILITY; FILMS; GALLIUM NITRIDE; POLARIZATION; SINGLE CRYSTALS; SUBSTRATES;

SEMICONDUCTOR DOPING;

EID: 84866366502     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4750039     Document Type: Conference Paper

References (27)

1. J. Y. Chang, B. T. Liou, H. W. Lin, Y. H. Shih, S. H. Chang, and Y. K. Kuo, Opt. Lett. 36, 3500 (2011). 10.1364/OL.36.003500
2. M. Gonschorek, J. F. Carlin, E. Feltin, M. A. Py, and N. Grandjean, J. Appl. Phys. 109, 063720 (2011). 10.1063/1.3552932
3. M. R. Holzworth, N. G. Rudawski, S. J. Pearton, K. S. Jones, L. Lu, T. S. Kang, F. Ren, and J. W. Johnson, Appl. Phys. Lett. 98, 122103 (2011). 10.1063/1.3569715
4. T. M. Al tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 92, 092105 (2008). 10.1063/1.2890416
5. L. Zhang, K. Ding, N. X. Liu, T. B. Wei, X. L. Ji, P. Ma, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, Appl. Phys. Lett. 98, 101110 (2011). 10.1063/1.3565173
6. D. Jena, S. Heikman, J. S. Speck, A. Gossard, and U. K. Mishra, Phys. Rev. B 67, 153306 (2003). 10.1103/PhysRevB.67.153306
7. J. Simon, A. (Kejia) Wang, H. Xing, S. Rajan, and D. Jena, Appl. Phys. Lett. 88, 042109 (2006). 10.1063/1.2168253
8. D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 81, 4395 (2002). 10.1063/1.1526161
9. J. Simon, A. (Kejia) Wang, H. Xing, D. Jena, and S. Rajan, Mater. Res. Soc. Symp. Proc. 892, 0892-FF17-04.1-6 (2006).
10. J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, Science 327, 60 (2010). 10.1126/science.1183226
11. L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, Appl. Phys. Lett. 97, 062103 (2010). 10.1063/1.3478556
12. O. Ambacher, Phys. Status Solidi B 216, 381 (1999). 10.1002/(SICI)1521- 3951(199911)216:1<381::AID-PSSB381>3.0.CO;2-O
13. S. Li, M. E. Ware, V. P. Kunets, M. Hawkridge, P. Minor, J. Wu, and G. J. Salamo, Phys. Status Solidi C 8, 2182 (2011). 10.1002/pssc.201001072
14. D. C. Look, Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989).
15. T. Matsubara and Y. Toyozava, Prog. Theor. Phys. 10, 107 (1961).
16. G. E. Stillman and C. M. Wolff, Thin Solid Films 31, 69 (1976). 10.1016/0040-6090(76)90355-2
17. D. C. Look, Z.-Q. Fang, and B. Claflin, J. Cryst. Growth 281, 143 (2005). 10.1016/j.jcrysgro.2005.03.035
18. D. C. Look and R. J. Molnar, Appl. Phys. Lett. 70, 3377 (1997). 10.1063/1.119176
19. Y. J. Wang, R. Kaplan, N. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, H. Amano, and I. Akasaki, J. Appl. Phys. 79, 8007 (1996). 10.1063/1.362351
20. A. Saxler, D. C. Look, S. Elhamri, J. Sizelove, W. C. Mitchel, C. M. Sung, S. S. Park, and K. Y. Lee, Appl. Phys. Lett. 78, 1873 (2001). 10.1063/1.1348304
21. V. P. Kunets, S. Prosandeev, Yu. I. Mazur, M. E. Ware, M. D. Teodoro, V. G. Dorogan, P. M. Lytvyn, and G. J. Salamo, J. Appl. Phys. 110, 083714 (2011). 10.1063/1.3656455
22. D. Jena, Polarization induced electron populations in III-V nitride semiconductors: Transport, growth, and device applications., Ph.D. dissertation (University of California, Santa Barbara, 2003).
23. D. C. Look and J. R. Sizelove, Phys. Rev. Lett. 82, 1237 (1999). 10.1103/PhysRevLett.82.1237
24. D. C. Look, J. R. Sizelove, S. Keller, Y. F. Wu, U. K. Mishra, and S. P. DenBaars, Solid State Commun. 102, 297 (1997). 10.1016/S0038-1098(96)00784-3
25. Ioffe Institute, see http://www.ioffe.rssi.ru/SVA/NSM/Semicond/index.html for information about the material parameters.
26. S. Rajan, S. P. DenBaars, U. K. Mishra, H. (Grace) Xing, and D. Jena, Appl. Phys. Lett. 88, 042103 (2006). 10.1063/1.2165190
27. B. K. Ridley, J. Appl. Phys. 84, 4020 (1998). 10.1063/1.368584