Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Wei, Wei ^a   Qin, Zhixin ^a   Fan, Shunfei ^a   Li, Zhiwei ^b   Shi, Kai ^b   Zhu, Qinsheng ^b   Zhang, Guoyi ^a  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Band offset; X ray photoelectron spectroscopy

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; PHOTOELECTRONS; PHOTONS; SAPPHIRE; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND OFFSETS; DRY THERMAL OXIDATIONS; SAPPHIRE SUBSTRATES; VALENCE BAND OFFSETS; X-RAY DIFFRACTION MEASUREMENTS;

VALENCE BANDS;

EID: 84870989162     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-562     Document Type: Article

References (18)

1. Yoshida S, Suzuki J: High-temperature reliability of GaN metal semiconductor fieldeffect transistor and bipolar junction transistor. J Appl. Phys 1999, 85:7931.
2. Chini A, Esposto M, Meneghesso G, Zanoni E: Evaluation of GaN HEMT degradation by means of pulsed IV, leakage and DLTS measurements. Electronics Letters Vol 2009, 45:8.
3. 3dielectrics on n-type GaN. Appl. Phys. Lett 2003, 82:4304.
4. Weng WY, Hsueh TJ, Chang SJ, Huang GJ, Hsueh HT: A high-responsivity GaN nanowire UV photodetector. IEEE Photonics Technology Letters. 2011, 23:7.
5. Wolter D, Luther BP, Waltemyer DL, Onnby C, Mohney SE, Molnar RJ: X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride. Appl. Phys. Lett 1997, 70:2156.
6. Kim H, Park SJ, Hwang H: Thermally oxidized GaN film for use as gate insulators. J. Vac. Sci. Technol. B 2001, 19:579.
7. Watkins NJ, Wicks GW, Gao Y: Oxidation study of GaN using x-ray photoemission spectroscopy. Appl. Phys. Lett 1999, 75:2602.
8. Shi K, DBLi HP, Song Y, Guo J, Wang X, Wang XQX, Liu JM, Yang AL, Wei HY, Zhang B, Yang SY, Liu XL, Zhu QS, Wang ZG: Determination of InN/diamond heterojunction band offset by x-ray photoelectron spectroscopy. Nanoscale Res Lett 2011, 6:50.
9. Kraut EA, Grant RW, Waldrop JR, Kowalczyk SP: Semiconductor core-level to valenceband maximum binding-energy differences: precise determination by x-ray photoelectron spectroscopy. Phys. Rev. B 1965, 1983:28.
10. Hong SK, Hanada T, Makino H, Chen Y, Ko HJ, Yao T, Tanaka A, Sasaki H, Sato S: Band alignment at a ZnO/GaN (0001) heterointerface. Appl. Phys. Lett 2001, 78:3349.
11. Gupta SK, Wu H-H, Kwak KJ, Casal P, Nicholson TR, Wen X, Anisha R, Bhusan B, Berger PR, Wu L, Brillson LJ, Lee SC: Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces. J. Phys. D: Appl. Phys 2011, 44:034010.
12. Moldovan G, Harrison I, Roe M, Brown PD: Effects of KOH etching on the properties of Ga-polar n-GaN surfaces. Philosophical Magazine 2006, 86:16.
13. Sato H, Sarkarf MR, Naoi Y, Sakai S: XPS measurement of valence band discontinuity at GaP/GaN heterointerfaces. Solid-State Electronics 1997, 41:205-207.
14. Craft HS, Collazo R, Losego MD, Mita S, Sitar Z, Maria JP: Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy. Appl. Phys. Lett 2007, 102:074104.
15. Chang S-H, Chen Z-Z, Huang W, Liu XC, Chen BY, Li ZZ, Shi EW: Band alignment of Ga2O3/6H-SiC heterojunction. Chin. Phys. B 2011, 11:116101.
16. Orita M, Ohta H, Hirano M, Hosono H: Deep-ultraviolet transparent conductive beta-Ga[sub 2]O[sub 3] thin films. Appl. Phys. Lett 2000, 77:4166.
17. Akazawa M, Matsuyama T, Hashizume T, Hiroki M, Yamahata S, Shigekawa N: Small valence-band offset of InAlN/GaN heterostructure grown by metal-organic vapor phase epitaxy. Appl. Phys. Lett 2010, 96:132104.
18. Weng GE, Ling AK, Lv XQ, Zhang JY, Zhang BP: III-Nitride-based quantum dots and their optoelectronic applications. Nano-Micro Lett 2011, 3:200-207.